SiC ALD Susceptor

Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**

Send Inquiry

Product Description

Benefits of Semicorex SiC ALD Susceptor:

High-temperature stability: The SiC ALD Susceptor maintains its structural integrity at elevated temperatures (up to 1600°C), enabling high-temperature ALD processes that result in denser films with improved electrical properties.

Chemical inertness: The SiC ALD Susceptor exhibits excellent resistance to a wide range of chemicals and precursors used in ALD, minimizing contamination risks and ensuring consistent film quality.

Uniform temperature distribution: The high thermal conductivity of the SiC ALD Susceptor promotes uniform temperature distribution across the susceptor surface, leading to uniform film deposition and improved device performance.

Low Outgassing: SiC has low outgassing properties, meaning it releases minimal impurities at high temperatures. This is crucial for maintaining a clean processing environment and preventing contamination of the deposited film.

Plasma Resistance: SiC demonstrates good resistance to plasma etching, making it compatible with plasma-enhanced ALD (PEALD) processes.

Long lifespan: The SiC ALD Susceptor’s durability and resistance to wear and tear translate to a longer lifespan for the susceptor, reducing the need for frequent replacements and lowering overall operating costs.

Comparison of ALD and CVD:

Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) are both widely used thin-film deposition techniques with distinct characteristics. Understanding their differences is crucial for selecting the most appropriate method for a specific application.

ALD vs CVD

Key Advantages of ALD:

Exceptional Thickness Control and Uniformity: Ideal for applications requiring atomic-level precision and conformal coatings on complex geometries.

Low Temperature Processing: Enables deposition on temperature-sensitive substrates and a wider material selection.

High Film Quality: Results in dense, pinhole-free films with low impurities.

Key Advantages of CVD:

Higher Deposition Rate: Suitable for applications requiring faster deposition rates and thicker films.

Lower Cost: More cost-effective for large-area deposition and less demanding applications.

Versatility: Can deposit a wide range of materials, including metals, semiconductors, and insulators.