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  • SiC-Coated Susceptor for GaN Epitaxy

    • China SiC-Coated Susceptor for GaN Epitaxy Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC-Coated Susceptor for GaN Epitaxy for many years and is one of the professional SiC-Coated Susceptor for GaN Epitaxy manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      Semicorex Alumina Chuck stands as a cornerstone tool within semiconductor processing, meticulously crafted from alumina ceramics. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • TaC Coating Wafer Tray

      TaC Coating Wafer Tray

      Semicorex TaC Coating Wafer Tray must be engineered to withstand the challenges of the extreme conditions within the reaction chamber, including high temperatures and chemically reactive environments.**
    • AIN Substrate

      AIN Substrate

      Semicorex’s AIN Substrate excels in superior thermal management and electrical isolation, providing a robust solution crafted from high-purity AlN ceramics. This white ceramic material is lauded for its comprehensive properties.**
    • TaC Coating Plate

      TaC Coating Plate

      Semicorex TaC Coating Plate stands out as a high-performance component for demanding epitaxial growth process and further semiconductor manufacturing environments.With its series of superior properties,it can ultimately enhance the productivity and cost-effectiveness of advanced semiconductor fabrication processes.**
    • 6 Inch Semi-Insulating HPSI SiC Wafer

      6 Inch Semi-Insulating HPSI SiC Wafer

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Porous Carbon

      Porous Carbon

      Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • LPE Apparatus

      In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

    • What is graphitising？

      Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

    • Demystifying Electrostatic Chuck (ESC) Technology in Wafer Handling

      Electrostatic chucks (ESCs) have become indispensable in semiconductor manufacturing and flat panel display production, offering a damage-free, highly controllable method for holding and positioning delicate wafers and substrates during critical processing steps. This article delves into the intricacies of ESC technology, exploring its principles of operation, various adhesion mechanisms, and fundamental structural components.

    • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

      Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

    • Main steps in SiC substrate processing

      The processing of 4H-SiC substrate mainly includes the following steps:

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