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  • Carbide Coated Susceptor

    • China Carbide Coated Susceptor Manufacturers, Suppliers, Factory

    Semicorex has been producing Carbide Coated Susceptor for many years and is one of the professional Carbide Coated Susceptor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SOI Wafers

      SOI Wafers

      Semicorex SOI Wafers represent a critical advancement in this field, offering numerous advantages over traditional silicon wafers. At Semicorex, we are proud to manufacture and supply SOI wafers that meet the rigorous demands of modern semiconductor applications.*
    • SiC Ceramic Chuck

      SiC Ceramic Chuck

      Semicorex SiC Ceramic Chuck is a highly specialized component designed for use in semiconductor epitaxial processes, where its role as a vacuum chuck is crucial. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
    • SiC Coated ICP Etching Carrier

      SiC Coated ICP Etching Carrier

      Semicorex SiC Coated ICP Etching Carrier engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Liquid Phase Epitaxy (LPE) Reactor System

      Liquid Phase Epitaxy (LPE) Reactor System

      Semicorex Liquid Phase Epitaxy (LPE) Reactor System is an innovative product that offers excellent thermal performance, even thermal profile, and superior coating adhesion. Its high purity, high-temperature oxidation resistance, and corrosion resistance make it an ideal choice for use in the semiconductor industry. Its customizable options and cost-effectiveness make it a highly competitive product in the market.
    • Epitaxy Component

      Epitaxy Component

      Semicorex Epitaxy Component is a crucial element in the production of high-quality SiC substrates for advanced semiconductor applications, a reliable choice for LPE reactor systems. By selecting Semicorex Epitaxy Component, customers can be confident in their investment and enhance their production capabilities in the competitive semiconductor market.*
    • Epi-SiC Susceptor

      Epi-SiC Susceptor

      Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
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    • The Crucial Role of Epitaxial Layers in Semiconductor Devices

      Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

    • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

      The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

    • High-Purity CVD Thick SiC: Process Insights for Material Growth

      Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

    • Knowing Cantilever Paddle

    • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

      Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

    • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

      ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

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