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SiC Coated Graphite Base Susceptors for MOCVD

SiC Coated Graphite Base Susceptors for MOCVD

Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.

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Product Description

Our SiC Coated Graphite Base Susceptors for MOCVD has a high heat and corrosion resistance that ensures great stability even in extreme environments.
The features of this SiC Coated Graphite Base Susceptors for MOCVD are outstanding. It is made with a high-purity silicon carbide coating on graphite, which makes it highly resistant to oxidation at high temperatures of up to 1600°C. The CVD chemical vapor deposition process used in its manufacturing ensures high purity and excellent corrosion resistance. The surface of the carrier is dense, with fine particles that enhance its corrosion resistance, making it resistant to acid, alkali, salt, and organic reagents.
Our SiC Coated Graphite Base Susceptors for MOCVD ensure an even thermal profile, guaranteeing the best laminar gas flow pattern. It prevents any contamination or impurities from diffusing into the wafer, making it ideal for use in cleanroom environments. Semicorex is a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China, and our products have a good price advantage. We look forward to becoming your long-term partner in the semiconductor industry.


Parameters of SiC Coated Graphite Base Susceptors for MOCVD

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Coated Graphite Susceptor for MOCVD

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




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