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  • SiC Coating for Semiconductor

    • China SiC Coating for Semiconductor Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC Coating for Semiconductor for many years and is one of the professional SiC Coating for Semiconductor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC Ceramic Seal Ring

      SiC Ceramic Seal Ring

      The SiC Ceramic Seal Ring is renowned for its robust performance and durability. Semicorex offers high-quality SiC Ceramic Seal Rings that meet the stringent demands of modern industry. These rings have become indispensable in enhancing the efficiency and reliability of mechanical seals.**
    • Semiconductor Wafer Chuck

      Semiconductor Wafer Chuck

      Semicorex advanced, high-purity Silicon Carbide Coated Components are built to withstand the extreme environments in wafer handling process. Our Semiconductor Wafer Chuck has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC Axle Sleeve

      SiC Axle Sleeve

      Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our SiC Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Ceramic Wafer Boat

      Ceramic Wafer Boat

      Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Porous Graphite Materials for Single Crystal SiC Growth Applications

      Porous Graphite Materials for Single Crystal SiC Growth Applications

      Semicorex Porous Graphite Materials for Single Crystal SiC Growth Applications, is a specialized material used in the semiconductor processing. This crucial piece of equipment plays a pivotal role on the quality of single crystal SiC. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • E-Chuck

      E-Chuck

      Semicorex E-Chuck is an advanced electrostatic chuck (ESC) specifically designed for high-performance applications in the semiconductor industry. Semicorex is a leading manufacturer for semiconductor in China.*
    • Related Blog
    • Reviews

    • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

      Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

    • Porous Graphite for SiC Crystal Growth

      Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

    • SiC Epitaxy

      There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

    • What is SOI

    • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

      Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

    • Thermal field insulation material

      The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

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