Semicorex Liquid Phase Epitaxy (LPE) Reactor System is an innovative product that offers excellent thermal performance, even thermal profile, and superior coating adhesion. Its high purity, high-temperature oxidation resistance, and corrosion resistance make it an ideal choice for use in the semiconductor industry. Its customizable options and cost-effectiveness make it a highly competitive product in the market.
Our Liquid Phase Epitaxy (LPE) Reactor System is a highly reliable and durable product that provides excellent value for money. Its high-temperature oxidation resistance, even thermal profile, and prevention of contamination make it ideal for high-quality epitaxial layer growth. Its low maintenance requirements and customizability make it a highly competitive product in the market.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Liquid Phase Epitaxy (LPE) Reactor System has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.
Contact us today to learn more about our Liquid Phase Epitaxy (LPE) Reactor System.
Parameters of Liquid Phase Epitaxy (LPE) Reactor System
Main Specifications of CVD-SIC Coating |
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SiC-CVD Properties |
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Crystal Structure |
FCC β phase |
|
Density |
g/cm ³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Grain Size |
μm |
2~10 |
Chemical Purity |
% |
99.99995 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
Thermal conductivity |
(W/mK) |
300 |
Features of Liquid Phase Epitaxy (LPE) Reactor System
- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.