SiC-Coated ICP Component

Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.

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Product Description

Semicorex's SiC-Coated ICP Component is the top choice for wafer handling processes that require high-temperature and chemical resistance. Our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion thanks to our fine SiC crystal. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our SiC-Coated ICP Component has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.
Contact us today to learn more about our SiC-Coated ICP Component.

Parameters of SiC-Coated ICP Component

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300