SiC Multi Pocket Susceptor

The foundation of Semicorex SiC Multi Pocket Susceptor is ultra-high purity isotropic graphite, renowned for its thermal stability and resistance to thermal shock. This base material is further enhanced through the application of a meticulously controlled CVD-deposited SiC coating. This combination delivers a unique synergy of properties:

Unparalleled Chemical Resistance: The SiC surface layer exhibits exceptional resistance to oxidation, corrosion, and chemical attack even at elevated temperatures inherent to epitaxial growth processes. This inertness ensures the SiC Multi Pocket Susceptor maintains its structural integrity and surface quality, minimizing the risk of contamination and ensuring extended operational lifespan.

Exceptional Thermal Stability and Uniformity: The inherent stability of isotropic graphite, coupled with the uniform SiC coating, guarantees uniform heat distribution across the susceptor surface. This uniformity is paramount in achieving homogeneous temperature profiles across the wafer during epitaxy, translating directly into superior crystal growth and film uniformity.

Enhanced Process Efficiency: The robustness and longevity of SiC Multi Pocket Susceptor contribute to increased process efficiency. Reduced downtime for cleaning or replacement translates to higher throughput and lower overall cost of ownership, crucial factors in demanding semiconductor fabrication environments.

The superior properties of the SiC Multi Pocket Susceptor directly translate to tangible benefits in epitaxial wafer fabrication:

Improved Wafer Quality: Enhanced temperature uniformity and chemical inertness contribute to reduced defects and improved crystal quality in the epitaxial layer. This directly translates to improved performance and yield of the final semiconductor devices.

Increased Device Performance: The ability to achieve precise control over doping profiles and layer thicknesses during epitaxy is crucial for optimizing device performance. The stable and uniform platform provided by the SiC Multi Pocket Susceptor enables manufacturers to fine-tune device characteristics for specific applications.

Enabling Advanced Applications: As the semiconductor industry pushes towards smaller device geometries and more complex architectures, the demand for high-performance epitaxial wafers continues to rise. Semicorex SiC Multi Pocket Susceptor plays a crucial role in enabling these advancements by providing the necessary platform for precise and repeatable epitaxial growth.