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    • China silicon carbide susceptor Manufacturers, Suppliers, Factory

    Semicorex has been producing silicon carbide susceptor for many years and is one of the professional silicon carbide susceptor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Silicon Carbide Ceramic Structural Parts

      Silicon Carbide Ceramic Structural Parts

      Semicorex Silicon Carbide Ceramic Structural Parts, gained from grains of silicon carbide bonded together by sintering, find extensive usage in the automotive, mechanical, chemical, semiconductor, space technology, microelectronics, and energy sectors, fulfilling critical roles in diverse applications across these industries. Due to their remarkable properties, Silicon Carbide Ceramic Structural Parts have become an ideal material for harsh conditions characterized by high temperatures, high pressures, corrosion, and abrasion, providing reliable performance and longevity in challenging operational environments.**
    • Silicon Carbide Tray

      Silicon Carbide Tray

      Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
    • Graphite Thermal Field

      Graphite Thermal Field

      Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
    • Al2O3 Substrate

      Al2O3 Substrate

      Semicorex proudly presents the Al2O3 Substrate, a versatile and high-performance material crafted from high-purity aluminum oxide (alumina). This advanced ceramic substrate is lauded for its exceptional properties, making it a cornerstone in various high-tech industries, including electronics, optoelectronics, and solid oxide fuel cells.**
    • 10x10mm Nonpolar M-plane Aluminum Substrate

      10x10mm Nonpolar M-plane Aluminum Substrate

      The unique attributes of Semicorex 10x10mm Nonpolar M-plane Aluminum Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 10x10mm Nonpolar M-plane Aluminum Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 10x10mm Nonpolar M-plane Aluminum Substrate’s versatility and critical role in technological advancements across diverse sectors.
    • Alumina Boat

      Alumina Boat

      Alumina Boat by Semicorex finds its niche in the semiconductor industry, general machinery, and high-temperature processes, proving indispensable for professionals seeking reliability and precision.
    • Related Blog
    • Reviews

    • Crystal Orientation and Defects in Silicon Wafers

      The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

    • Silicon Carbide Applications

      Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

    • Introducing core technology of graphite boat

      Graphite Boat, stands at the forefront of technological innovation in its industry, featuring a suite of groundbreaking advancements designed to enhance performance, purity, and lifespan. Below, we delve into the core technologies that define graphite boat's excellence:

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Application and Development Challenges of TaC Coated Graphite Components

      The third-generation wide bandgap semiconductor materials, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are renowned for their exceptional optoelectronic conversion and microwave signal transmission capabilities. These materials meet the demanding requirements of high-frequency, high-temperature, high-power, and radiation-resistant electronic devices. Therefore, they have vast application prospects in new-generation mobile communications, new energy vehicles, smart grids, and LED technologies. The comprehensive development of the third-generation semiconductor industry urgently requires breakthroughs in key core technologies, continual advancement in device design and innovation, and a resolution to import dependencies.

    • Main steps in SiC substrate processing

      The processing of 4H-SiC substrate mainly includes the following steps:

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