2" Gallium Oxide Substrates

Semicorex 2" Gallium Oxide Substrates represent a new chapter in the story of fourth-generation semiconductors, with an accelerating pace of mass production and commercialization. These substrates exhibit exceptional benefits for various advanced technological applications. Gallium Oxide substrates not only symbolize a significant advancement in semiconductor technology but also open up new avenues for improving device efficiency and performance across a spectrum of high-stakes industries. We at Semicorex are dedicated to manufacturing and supplying high-performance 2" Gallium Oxide Substrates that fuse quality with cost-efficiency.**

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Product Description

Ultraviolet Light Detection and Power Equipment: Semicorex 2" Gallium Oxide Substrates’ wide bandgap of approximately 4.8-4.9 eV allows them to excel in applications such as ultraviolet light detectors and power equipment, where it exhibits superior performance in managing high voltage and power conditions efficiently.

High-Temperature Operations: the 2" Gallium Oxide Substrates’ s excellent high-temperature stability allows them to operate in environments up to 1200 degrees Celsius. This feature makes it highly suitable for high-temperature, high-power, and high-frequency applications, surpassing many other semiconductor materials.

High Breakdown Field: The high breakdown field strength of the 2" Gallium Oxide Substrates makes them an excellent candidate for high-voltage applications, significantly enhancing the reliability and longevity of devices such as power converters and inverters.

Chemical Resistance: The high chemical stability of the 2" Gallium Oxide Substrates under standard temperature and pressure conditions ensures resistance against many acids and bases, enhancing its durability and lifespan in harsh chemical environments.

The unique combination of these properties positions Semicorex 2" Gallium Oxide Substrates as a versatile material in the fields of power electronics, optoelectronics, photocatalysis, and gas sensing. Its extensive application potential is due to its ability to perform reliably under challenging conditions, pushing the boundaries of current semiconductor capabilities.