4" Gallium Oxide Substrates

Semicorex 4" Gallium Oxide Substrates exhibits excellent chemical and thermal stability, ensuring its performance remains consistent and reliable even under extreme conditions. This robustness is crucial in applications involving high temperatures and reactive environments. Plus, the 4" Gallium Oxide Substrates maintains excellent optical transparency across a broad wavelength range from ultraviolet to infrared, making it attractive for optoelectronic applications including light-emitting diodes and laser diodes.

With a bandgap ranging from 4.7 to 4.9 eV, the 4" Gallium Oxide Substrates significantly surpasses Silicon Carbide (SiC) and Gallium Nitride (GaN) in critical electric field strengths, reaching up to 8 MV/cm compared to SiC’s 2.5 MV/cm and GaN’s 3.3 MV/cm. This property, combined with an electron mobility of 250 cm²/Vs and enhanced transparency in conducting electricity, gives the 4" Gallium Oxide Substrates a significant edge in power electronics. Its Baliga’ s figure of merit exceeds 3000, multiple times that of GaN and SiC, indicating superior efficiency in power applications.

Semicorex 4" Gallium Oxide Substrates are particularly advantageous for use in communication, radar, aerospace, high-speed rail, and new energy vehicles. They are exceptionally suitable for radiation detection sensors in these sectors, especially in high-power, high-temperature, and high-frequency devices where Ga2O3 shows significant advantages over SiC and GaN.