ICP Plasma Etching Tray

Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.

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Product Description

Our ICP plasma etching tray is silicon carbide coated using CVD method, which is the ideal solution for wafer handling processes that require high-temperature and harsh chemical cleaning. Semicorex's carriers feature a fine SiC crystal coating that provides even thermal profiles, laminar gas flow patterns, and prevents contamination or impurities diffusion.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our ICP plasma etching tray has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.
Contact us today to learn more about our ICP Plasma Etching Tray.

Parameters of ICP Plasma Etching Tray

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300