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  • Compound Semiconductor Wafers

    • China Compound Semiconductor Wafers Manufacturers, Suppliers, Factory

    Semicorex has been producing Compound Semiconductor Wafers for many years and is one of the professional Compound Semiconductor Wafers manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      SiC Coated Support Ring

      Semicorex SiC Coated Support Ring is an essential component used in the semiconductor epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Tantalum Carbide Coated Graphite Susceptor

      Tantalum Carbide Coated Graphite Susceptor

      Semicorex provides Tantalum Carbide Coated Graphite Susceptor with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Batch Wafer Boat

      Batch Wafer Boat

      Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Batch Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • ICP Plasma Etching System for PSS Process

      ICP Plasma Etching System for PSS Process

      Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
    • Ceramic End Effector

      Ceramic End Effector

      Semicorex is your partner for advanced graphite components and assemblies to support higher throughput and better yields in your semiconductor processing equipment. Our materials experts are ready to work with you to develop the optimal right solution for your wafer handling, heating, and processing requirements. Our Ceramic End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC ICP Etching Plate

      SiC ICP Etching Plate

      Semicorex SiC ICP Etching Plate is an advanced and indispensable component in the semiconductor industry, designed to enhance the precision and efficiency of etching processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Related Blog
    • Reviews

    • What is graphitising？

      Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

    • What is epitaxial wafer process?

      Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

    • Silicon Carbide(SiC) Crystal Growth Furnace

      Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

    • Main steps in SiC substrate processing

      The processing of 4H-SiC substrate mainly includes the following steps:

    • SiC Cutting

      Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

    • Funds on Semiconductor projects

      Every country is aware of the importance of chips and is now accelerating the construction of its own chip manufacturing supply chain ecosystem to prevent another chip shortage problem. But the advanced foundries without next-gen chip designers would be the same as “Fabs without Chips”.

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