Knowing MOCVD

MOCVD is a new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE). MOCVD uses organic compounds of III and II elements and hydrides of V and VI elements as crystal growth source materials. It performs vapor phase epitaxy on the substrate through thermal decomposition reaction to grow various III-V main groups, Thin-layer single crystal materials of II-VI subgroup compound semiconductors and their multi-element solid solutions. Usually crystal growth in the MOCVD system is carried out in a cold-wall quartz (stainless steel) reaction chamber with H2 flowing under normal pressure or low pressure (10-100Torr). The substrate temperature is 500-1200°C, and the graphite base is heated with DC ( The substrate substrate is on top of the graphite base), and H2 is bubbled through a temperature-controlled liquid source to carry metal-organic compounds to the growth zone.

MOCVD has a wide range of applications and can grow almost all compounds and alloy semiconductors. It is very suitable for growing various heterostructure materials. It can also grow ultra-thin epitaxial layers and obtain very steep interface transitions. The growth is easy to control and can grow with very high purity. High-quality materials, the epitaxial layer has good uniformity over a large area and can be produced on a large scale.

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