English
Home > Products
  • SiC Coated Graphite Carrier for Epitaxial Growth

    • China SiC Coated Graphite Carrier for Epitaxial Growth Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC Coated Graphite Carrier for Epitaxial Growth for many years and is one of the professional SiC Coated Graphite Carrier for Epitaxial Growth manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • TaC Coating Wafer Chuck

      TaC Coating Wafer Chuck

      Semicorex TaC Coating Wafer Chuck stands as the pinnacle of innovation in the semiconductor epitaxy process, a critical phase in semiconductor manufacturing. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
    • Sapphire Crystal Growth Heater

      Sapphire Crystal Growth Heater

      Enhance your capacity for precision thermal management with the Semicorex Sapphire Crystal Growth Heater. This heater, meticulously designed for optimal performance, boasts a SiC layer integration that solidifies its role as a superior element in crystal growth operations, promoting both high efficiency and dependability.We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Heater that fuse quality with cost-efficiency.
    • Ultra-Thin Graphite with High Porosity

      Ultra-Thin Graphite with High Porosity

      Semicorex Ultra-Thin Graphite with High Porosity is primarily utilized in the semiconductor industry, particularly in the single crystal growth process featuring excellent surface adhesion, superior heat resistance, high porosity and ultra-thin thickness with outstanding machinability. We at Semicorex are dedicated to manufacturing and supplying high-performance Ultra-Thin Graphite with High Porosity that fuse quality with cost-efficiency. **
    • Bulk SiC Ring

      Bulk SiC Ring

      Semicorex Bulk SiC Ring is a crucial component in semiconductor etching processes, specifically designed for use as an etching ring within advanced semiconductor manufacturing equipment. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
    • Epi Pre Heat Ring

      Epi Pre Heat Ring

      Enhance the efficiency and precision of your semiconductor epitaxial processes with the Semicorex cutting-edge Epi Pre Heat Ring. Crafted with precision from SiC-coated graphite, this advanced ring plays a pivotal role in optimizing your epitaxial growth by pre-heating process gases before they enter the chamber.
    • TaC Coated Wafer Susceptor

      TaC Coated Wafer Susceptor

      Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Introducing core technology of graphite boat

      Graphite Boat, stands at the forefront of technological innovation in its industry, featuring a suite of groundbreaking advancements designed to enhance performance, purity, and lifespan. Below, we delve into the core technologies that define graphite boat's excellence:

    • Core Material for SiC Growth: Tantalum Carbide Coating

      The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

    • Porous Graphite for SiC Crystal Growth

      Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

    • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

      Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

    • Knowing GaN

      Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

    • How to Manufacture Graphite Rods?

      Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept