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  • Gan On Sic

    • China Gan On Sic Manufacturers, Suppliers, Factory

    Semicorex has been producing Gan On Sic for many years and is one of the professional Gan On Sic manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      CVD Chemical Vapor Deposition Furnaces

      Semicorex CVD Chemical Vapor Deposition furnaces make the manufacture of high-quality epitaxy more efficient. We provide custom furnace solutions. Our CVD Chemical Vapor Deposition furnaces have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Fused Quartz Pedestal

      Fused Quartz Pedestal

      The Fused Quartz Pedestal, is specifically designed for use in Atomic Layer Deposition (ALD), Low-Pressure Chemical Vapor Deposition (LPCVD), and diffusion processes, ensuring uniform deposition of thin films on wafer surfaces.**
    • Susceptor with Grid

      Susceptor with Grid

      Semicorex Susceptor with Grid is a specialized component used in the epitaxial growth process of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Quartz 12 inch Outer Tube

      Quartz 12 inch Outer Tube

      Semicorex Quartz 12 Inch Outer Tube is a specialized component meticulously designed for use in the semiconductor industry, where precision, reliability, and high performance are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • SiC Epi-Wafer Susceptor

      SiC Epi-Wafer Susceptor

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Epi-Wafer Susceptor has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Semiconductor Wafer Boat for Vertical Furnaces

      Semiconductor Wafer Boat for Vertical Furnaces

      Semicorex semiconductor wafer boat for vertical furnaces is a specialized tool used in the manufacturing process of semiconductor devices. It is designed to hold and transport silicon wafers during the various stages of wafer processing in a vertical furnace. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    • Ion Implant and Diffusion Process

      Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

    • What is epitaxial wafer process?

      Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

    • Substrate and Epitaxy

      In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

    • Monocrystalline silicon vs. polycrystalline silicon

      Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

      As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

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