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  • Gan On Silicon Carbide

    • China Gan On Silicon Carbide Manufacturers, Suppliers, Factory

    Semicorex has been producing Gan On Silicon Carbide for many years and is one of the professional Gan On Silicon Carbide manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Process Tube for Diffusion Furnaces

      Process Tube for Diffusion Furnaces

      Semicorex process tube for diffusion furnaces is a specialized component used in the manufacturing of semiconductor devices. It is designed to provide a controlled environment for diffusion processes, where impurities are introduced into the semiconductor wafers to modify their electrical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • MOCVD Inlet Seal Ring

      MOCVD Inlet Seal Ring

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Seal Ring has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Si3N4 Sleeve

      Si3N4 Sleeve

      Si3N4 Sleeve by Semicorex is a versatile and high-performance material that offers a unique combination of low density, superior hardness, excellent wear resistance, and exceptional thermal and chemical stability.**
    • RTP Graphite Carrier Plate

      RTP Graphite Carrier Plate

      Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
    • Robot End Effector

      Robot End Effector

      Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Robot End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • CVD TaC Coating Cover

      CVD TaC Coating Cover

      Semicorex CVD TaC Coating Cover has been becoming a critical enabling technology in the demanding environments within epitaxy reactors, characterized by high temperatures, reactive gases, and stringent purity requirements, necessitate robust materials to ensure consistent crystal growth and prevent unwanted reactions.**
    • Related Blog
    • Reviews

    • MOCVD is the key equipment

    • What is quartz?

      Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • What is SiC coated graphite susceptor?

      In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

    • Can you grind silicon carbide?

      Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

    • Application Scenarios for Epitaxial Layers

      We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

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