TaC-coated Halfmoon

Semicorex TaC-coated Halfmoon offers compelling advantages in the epitaxial growth of silicon carbide (SiC) for power electronics and RF applications. This material combination addresses critical challenges in SiC epitaxy, enabling higher wafer quality, improved process efficiency, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance TaC-coated Halfmoon that fuses quality with cost-efficiency.**

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Product Description

Semicorex TaC-coated Halfmoon maintains its structural integrity and chemical inertness at the elevated temperatures (up to 2200°C) required for SiC epitaxy. This ensures consistent thermal performance and prevents unwanted reactions with process gases or source materials. And it can be engineered to optimize thermal conductivity and emissivity, promoting uniform heat distribution across the susceptor surface. This leads to more homogeneous wafer temperature profiles and improved uniformity in epitaxial layer thickness and doping concentration. Moreover, the TaC-coated Halfmoon’s thermal expansion coefficient can be tailored to closely match that of SiC, minimizing thermal stress during heating and cooling cycles. This reduces wafer bowing and the risk of defect formation, contributing to higher device yields.

The TaC-coated Halfmoon significantly extends the service life of graphite susceptors compared to uncoated/SiC-coated alternatives. The enhanced resistance to SiC deposition and thermal degradation reduces the frequency of cleaning cycles and replacement, lowering overall manufacturing costs.

Benefits for SiC Device Performance:

Enhanced Device Reliability and Performance: The improved uniformity and reduced defect density in epitaxial layers grown on the TaC-coated Halfmoon translate to higher device yields and improved performance in terms of breakdown voltage, on-resistance, and switching speed.

Cost-Effective Solution for High-Volume Manufacturing: The extended lifetime, reduced maintenance requirements, and improved wafer quality contribute to a more cost-effective manufacturing process for SiC power devices.

Semicorex TaC-coated Halfmoon plays a critical role in advancing SiC epitaxy by addressing key challenges related to material compatibility, thermal management, and process contamination. This enables the production of higher-quality SiC wafers, leading to more efficient and reliable power electronic devices for applications in electric vehicles, renewable energy, and other demanding industries.