English
Home > Products > tantalum carbon;TaC;epitaxial growth;tantalum carbide coating;;wafer carrier;wafer carriers semiconductor;wafer holder;sic epitaxy;LPE;

China tantalum carbon;TaC;epitaxial growth;tantalum carbide coating;;wafer carrier;wafer carriers semiconductor;wafer holder;sic epitaxy;LPE; Manufacturers, Suppliers, Factory

Our growth depends to the superior products ,great talents and repeatedly strengthened technology forces for tantalum carbon;TaC;epitaxial growth;tantalum carbide coating;;wafer carrier;wafer carriers semiconductor;wafer holder;sic epitaxy;LPE;, Our firm quickly grew in size and reputation because of its absolute dedication to superior quality manufacturing, substantial price of solutions and fantastic customer services.
tantalum carbon;TaC;epitaxial growth;tantalum carbide coating;;wafer carrier;wafer carriers semiconductor;wafer holder;sic epitaxy;LPE;, With the effort to keep pace with world's trend, we are going to always endeavor to meet customers' demands. If you want develop any other new products and solutions, we can customize them in your case. If you feel interest in any of our goods or want develop new merchandise, remember to feel free to contact us. We're looking forward to forming successful business relationship with customers all over the world.

Related Products

Hot Products

  • TaC Coated Ring

    TaC Coated Ring

    Semicorex TaC Coated Ring stands as a critical component that meets these demanding requirements. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • CVD Epitaxial Deposition In Barrel Reactor

    CVD Epitaxial Deposition In Barrel Reactor

    Semicorex CVD Epitaxial Deposition In Barrel Reactor is a highly durable and reliable product for growing epixial layers on wafer chips. Its high-temperature oxidation resistance and high purity make it suitable for use in the semiconductor industry. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for high-quality epixial layer growth.
  • SiC Ceramic Heat Transfer Plates

    SiC Ceramic Heat Transfer Plates

    Semicorex SiC Ceramic Heat Transfer Plates, based on SiC as the primary material, undergo high-temperature sintering at 2250°C, resulting in a highly vitrified, zero-porosity dense ceramic body with an SiC content of ≥99.3%. Exhibiting a bending strength of ≥410MPa and a thermal conductivity of 140W/m.k, these ceramics are the only materials capable of withstanding corrosion from strong acids such as hydrofluoric acid (HF) and sulfuric acid (H2SO4) in the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Heat Transfer Plates that fuse quality with cost-efficiency. **
  • SiC Susceptor for ICP Etch

    SiC Susceptor for ICP Etch

    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • Vacuum Chuck

    Vacuum Chuck

    Semicorex Vacuum Chuck is a high-performance component designed for secure and precise wafer handling in semiconductor manufacturing. Choose Semicorex for our advanced, durable, and contamination-resistant solutions that ensure optimal performance in even the most demanding processes.*
  • Fused Quartz Ring

    Fused Quartz Ring

    The Fused Quartz Ring from Semicorex is a critical component designed specifically for the semiconductor etching process with exceptional purity, thermal stability, and chemical resistance. **
  • Related Blog
  • Reviews

  • What is a MOCVD system?

  • The Critical Role of SiC Substrates and Crystal Growth in the Semiconductor Industry

    Within the silicon carbide (SiC) industry chain, substrate suppliers hold significant leverage, primarily due to value distribution. SiC substrates account for 47% of the total value, followed by epitaxial layers at 23%, while device design and manufacturing constitute the remaining 30%. This inverted value chain stems from the high technological barriers inherent to substrate and epitaxial layer production. Three major challenges plague SiC substrate growth: stringent growth conditions, slow growth rates, and demanding crystallographic requirements. These complexities contribute to increased processing difficulty, ultimately resulting in low product yields and high costs. Furthermore, the epitaxial layer’s thickness and doping concentration are critical parameters directly impacting the final device performance.

  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • The Impact of Temperature on CVD-SiC Coatings

    Chemical Vapor Deposition (CVD) is a versatile technique for producing high-quality coatings with various applications in industries such as aerospace, electronics, and materials science. CVD-SiC coatings are known for their exceptional properties, including high temperature resistance, mechanical strength, and excellent corrosion resistance.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept