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Semicorex has been producing tantalum carbon;TaC;epitaxial growth;tantalum carbide coating;;wafer carrier;wafer carriers semiconductor;wafer holder;sic epitaxy;LPE; for many years and is one of the professional tantalum carbon;TaC;epitaxial growth;tantalum carbide coating;;wafer carrier;wafer carriers semiconductor;wafer holder;sic epitaxy;LPE; manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • High-purity Carbon Powder

    High-purity Carbon Powder

    Semicorex High-purity Carbon Powder serves as a crucial precursor in the synthesis of high-purity silicon carbide (SiC) powder and other solid-state carbide materials. It ensures the purity and quality required for advanced applications in the semiconductor, electronics, and ceramics industries. We at Semicorex are dedicated to manufacturing and supplying high-performance High-purity Carbon Powder that fuse quality with cost-efficiency.**
  • Mechanical Seal Parts

    Mechanical Seal Parts

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Mechanical Seal Parts have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Epitaxy

    SiC Epitaxy

    Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Graphite Cover

    TaC Coating Graphite Cover

    Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • ICP Etching Wafer Holder

    ICP Etching Wafer Holder

    Semicorex's ICP etching wafer holder is the perfect solution for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • TaC Coated Ring

    TaC Coated Ring

    Semicorex TaC Coated Ring stands as a critical component that meets these demanding requirements. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • What are SiC-coated graphite susceptors?

    The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

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