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    ICP Plasma Etching System for PSS Process

    Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • MOCVD Susceptor for Epitaxial Growth

    MOCVD Susceptor for Epitaxial Growth

    Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
  • TaC Coated Graphite Parts

    TaC Coated Graphite Parts

    Semicorex TaC Coated Graphite Parts are precision-crafted components that are specially designed to withstand the demanding environment of semiconductor processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Chuck

    Tantalum Carbide Chuck

    Semicorex Tantalum Carbide Chuck is an advanced component used in semiconductor manufacturing equipment, renowned for its exceptional thermal and mechanical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Coating Heater

    SiC Coating Heater

    The CVD SiC coating of Semicorex SiC Coating Heater offers superior performance in protecting heating elements from the harsh, corrosive, and reactive environments often encountered in processes such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Epitaxial Growth.**
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  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

  • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

    The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • Introducing Silicon Material

    Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

  • What is the notch on wafers?

    The wafer notch is a V-shaped or U-shaped groove on the edge of a semiconductor wafer. Far from being a defect incurred during the manufacturing process, it is the critical structural marker that was intentionally designed, whose core function lies in enabling precise positioning and orientation identification of the wafer. Wafer flat was used as the orientation marking in the early stages of wafer technology development. However, as wafer sizes gradually increased, the flat-edge design occupied more effective area, thus being gradually replaced by the more compact notch.

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