Susceptor Plate

Semicorex Susceptor Plate is a crucial component in the epitaxial growth process, specifically designed to carry semiconductor wafers during the deposition of thin films or layers. In the context of Metal-Organic Chemical Vapor Deposition (MOCVD), these plates are particularly crafted from materials that can withstand high temperatures and provide a stable surface for the growth of epitaxial layers.

The Susceptor Plate used in this process is constructed from graphite that is coated with silicon carbide (SiC) through a MOCVD process itself. Silicon carbide offers exceptional thermal stability, mechanical strength, and resistance to chemical reactions, making it an ideal choice for the demanding conditions of epitaxial growth.

During MOCVD, the Susceptor Plate plays a pivotal role by effectively transferring heat to the semiconductor wafers. The plate absorbs energy from the surrounding environment and radiates it towards the wafers, facilitating the controlled deposition of thin films onto the wafer surfaces. This precise temperature control is essential for achieving uniform and high-quality epitaxial layers, which are crucial in the production of advanced semiconductor devices.

The Susceptor Plate in MOCVD processes, composed of SiC-coated graphite, serves as a reliable platform for supporting semiconductor wafers, ensuring optimal heat transfer, and contributing to the successful epitaxial growth of thin films with desired characteristics for semiconductor applications.