Susceptor Disc

The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.

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Product Description

Crafted from high-purity graphite and coated with a layer of silicon carbide (SiC) using the MOCVD technique, the Semicorex Susceptor Disc combines exceptional thermal properties with remarkable chemical stability. The silicon carbide coating ensures excellent resistance to high temperatures and corrosive conditions, crucial for maintaining the integrity of the Susceptor Disc in challenging environments.

Additionally, the SiC coating on the Susceptor Disc enhances its thermal conductivity, which allows for swift and even heat distribution critical for consistent epitaxial growth. It efficiently absorbs and radiates heat, providing a stable, uniform temperature essential for the deposition of thin films. This uniformity is vital for achieving high-quality epitaxial layers, which are fundamental to the functionality and performance of advanced semiconductor devices.

The design of the Susceptor Disc also addresses the challenge of thermal expansion. Its minimal coefficient of thermal expansion ensures a strong bond with the epitaxial layers, reducing the risk of cracking due to thermal cycling. This feature, coupled with the Susceptor Disc’s high melting point and excellent oxidation resistance, allows for reliable operation under extreme conditions.

With these advanced properties, the Susceptor Disc not only meets but exceeds the stringent requirements of modern MOCVD applications, providing a reliable, high-performance solution that enhances the overall efficiency and output of the epitaxial growth process.