Epi-SiC Susceptor

Semicorex Epi-SiC Susceptor a confluence of high-temperature endurance, chemical inertness, and superior thermal diffusion, it stands as a paragon of resilience and efficiency in the face of the intensive conditions synonymous with epitaxial growth endeavors. The application of a SiC coating significantly augments the thermal attributes of the Epi-SiC Susceptor. This enhancement facilitates the uniform thermal distribution essential for the wafers’ heating, pivotal for the deposition of consistent, high-quality epitaxial layers across semiconductor wafers.

Tailor-made to meet the exacting demands of wafer epitaxial processes, the Epi-SiC Susceptor underpins the seamless transport of wafers within the furnace environment. Its robust design is a bulwark against wafer displacement or compromise, thereby mitigating the incidence of damage throughout the critical stages of epitaxial layer development. Additionally, the Epi-SiC Susceptor acts as a protective barrier for the graphite substrate beneath, shielding it from the chemical interactions and abrasion that epitaxial processes might induce.

The fusion of a resilient graphite core with a protective SiC coating not only bolsters the the Epi-SiC Susceptor’s performance metrics but also significantly protracts its serviceable life. The result is an investment that yields dividends in the form of sustained operational savings for semiconductor production enterprises, positioning the Epi-SiC Susceptor as a judicious choice for those looking to optimize their manufacturing operations.