SiC MOCVD Cover Segment

Semicorex SiC MOCVD Cover Segment leverages a synergistic combination of materials selected for their performance under extreme temperatures and in the presence of highly reactive precursors. The core of each segment is constructed from high-purity Isostatic Graphite, boasting an ash content below 5 ppm. This exceptional purity minimizes potential contamination risks, ensuring the integrity of the SiC epilayers being grown. Except for it, a precisely applied Chemical Vapor Deposition (CVD) SiC Coating forms a protective barrier over the graphite substrate. This high-purity (≥ 6N) layer exhibits outstanding resistance to the aggressive precursors commonly used in SiC epitaxy.

Key Features:

These material characteristics translate into tangible benefits within the demanding environment of SiC MOCVD:

Unwavering Temperature Resilience: The combined strength of the SiC MOCVD Cover Segment ensures structural integrity and prevents warping or deformation even at the extreme temperatures (often exceeding 1500°C) required for SiC epitaxy.

Chemical Attack Resistance: The CVD SiC layer acts as a robust shield against the corrosive nature of common SiC epitaxy precursors, such as silane and trimethylaluminum. This protection maintains the SiC MOCVD Cover Segment’ s integrity over extended use, minimizing particle generation and ensuring a cleaner process environment.

Promoting Wafer Uniformity: The inherent thermal stability and uniformity of the SiC MOCVD Cover Segment contribute to a more evenly distributed temperature profile across the wafer during epitaxy. This results in more homogeneous growth and superior uniformity of the deposited SiC epilayers.

Aixtron G5 Susceptor Kit Semicorex Supplies

Operational Benefits:

Beyond process improvements, Semicorex SiC MOCVD Cover Segment offers significant operational advantages:

Prolonged Service Life: The robust material selection and construction translate to an extended lifespan for the cover segments, reducing the need for frequent replacements. This minimizes process downtime and contributes to lower overall operational costs.

High-Quality Epitaxy Enabled: Ultimately, the advanced SiC MOCVD Cover Segment contributes directly to the production of superior SiC epilayers, paving the way for higher-performance SiC devices used in power electronics, RF technology, and other demanding applications.