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    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • Barrel Susceptor Epi System

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    Semicorex Barrel Susceptor Epi System is a high-quality product that offers superior coating adhesion, high purity, and high-temperature oxidation resistance. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of epixial layers on wafer chips. Its cost-effectiveness and customizability make it a highly competitive product in the market.
  • GaN-on-SiC Epitaxial Wafers Carrier

    GaN-on-SiC Epitaxial Wafers Carrier

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our GaN-on-SiC Epitaxial Wafers Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Parts Abdeck Segmenten

    SiC Parts Abdeck Segmenten

    Semicorex SiC Parts Abdeck Segmenten, a crucial component in semiconductor device manufacturing that redefines precision and durability. Crafted from SiC coated graphite, these small yet essential parts play a pivotal role in advancing semiconductor processing to new levels of efficiency and reliability.
  • TaC Coating Chuck

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  • SiC ALD Susceptor

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    Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**
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    The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

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    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

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