Barrel Susceptor Epi System

Semicorex Barrel Susceptor Epi System is a high-quality product that offers superior coating adhesion, high purity, and high-temperature oxidation resistance. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of epixial layers on wafer chips. Its cost-effectiveness and customizability make it a highly competitive product in the market.

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Product Description

Our Barrel Susceptor Epi System is a highly innovative product that offers excellent thermal performance, even thermal profile, and superior coating adhesion. Its high purity, high-temperature oxidation resistance, and corrosion resistance make it a highly reliable product for use in the semiconductor industry. Its prevention of contamination and impurities and low maintenance requirements make it a highly competitive product in the market.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Barrel Susceptor Epi System has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.
Contact us today to learn more about our Barrel Susceptor Epi System.

Parameters of Barrel Susceptor Epi System

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Barrel Susceptor Epi System

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.