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  • Silicon Carbide SiC Coated for LPE

    • China Silicon Carbide SiC Coated for LPE Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide SiC Coated for LPE for many years and is one of the professional Silicon Carbide SiC Coated for LPE manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • TaC Coating Wafer Tray

      TaC Coating Wafer Tray

      Semicorex TaC Coating Wafer Tray must be engineered to withstand the challenges of the extreme conditions within the reaction chamber, including high temperatures and chemically reactive environments.**
    • Susceptor Disc

      Susceptor Disc

      The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
    • Wafer Carrier Tray

      Wafer Carrier Tray

      Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Tray for many years. Our Wafer Carrier Tray has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Cassette Handles

      Cassette Handles

      Semicorex Cassette handles made of PFA and PTFE ensure the safe and efficient movement of wafer cassettes in semiconductor processing. Choose Semicorex for high-performance, durable handles that offer superior chemical resistance and thermal stability, ensuring optimal wafer protection and manufacturing efficiency.*
    • Silicon Carbide-Coated Graphite Barrel

      Silicon Carbide-Coated Graphite Barrel

      The Semicorex Silicon Carbide-Coated Graphite Barrel is the perfect choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in LPE processes and other high-temperature environments.
    • Graphite Heater For Hot Zone

      Graphite Heater For Hot Zone

      Semicorex Graphite Heater For Hot Zone, designed to operate reliably within high-temperature furnaces, are engineered to withstand the challenging conditions inherent to processes like chemical vapor deposition (CVD), epitaxy, and high-temperature annealing. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heater For Hot Zone that fuses quality with cost-efficiency.**
    • Related Blog
    • Reviews

    • Oxidation in Semiconductor Processing

      Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

    • What is epitaxial wafer process?

      Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

    • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

      Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

    • What is the Difference Between Epitaxial and Diffused Wafers

      Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

    • TaC Coating

      According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

    • Semicorex Announces 8-Inch SiC Epitaxial Wafer

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