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  • 8 Inch N-type SiC Wafer

    8 Inch N-type SiC Wafer

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafers for many years. Our 8 Inch N-type SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SOI Wafer Silicon On Insulator

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    Semicorex SOI Wafer Silicon On Insulator is a specialized type of semiconductor wafer used in the production of advanced integrated circuits. They are designed to improve the performance, power efficiency, and reliability of electronic devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • PSS Etching Carrier Tray for Wafer Processing

    PSS Etching Carrier Tray for Wafer Processing

    Semicorex's PSS Etching Carrier Tray for Wafer Processing is specifically designed for the demanding epitaxy equipment applications. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The PSS Etching Carrier Tray for Wafer Processing has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our products are cost-effective and have a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • AlN Ceramic Disc

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  • What is Thermal Annealing

    The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • What is C/C composite?

    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • What is quartz?

    Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

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