SiC Wafer Tray

The Semicorex SiC Wafer Tray, Functioning as a key element in MOCVD apparatus, holds and thermally manages single crystal substrates. Its exceptional performance characteristics, including superior thermal stability and uniformity as well as corrosion inhibition and so on , are crucial for the high-quality growth of epitaxial materials. These attributes ensure consistent uniformity and purity in thin film layers.

Enhanced with a SiC coating, the SiC wafer tray significantly improves thermal conductivity, facilitating rapid and even heat distribution vital for uniform epitaxial growth. The SiC wafer tray’ s ability to efficiently absorb and radiate heat maintains a stable and consistent temperature, essential for the precise deposition of thin films. This uniform temperature distribution is critical for producing high-quality epitaxial layers, which are essential for the performance of advanced semiconductor devices.

The reliable performance and longevity of the SiC Wafer Tray reduce the frequency of replacements, minimizing downtime and maintenance costs. Its robust construction and superior operational capabilities enhance process efficiency, thereby increasing productivity and cost-effectiveness in semiconductor manufacturing.

Additionally, the Semicorex SiC Wafer Tray exhibits excellent resistance to oxidation and corrosion at high temperatures, further ensuring its durability and reliability. Its high thermal endurance, marked by a significant melting point, enables it to withstand the rigorous thermal conditions inherent in semiconductor fabrication processes.