SiC ICP plate

Semicorex SiC ICP plate is made by Silicon carbide, known for its exceptional physical and chemical properties. Its robust nature ensures superior resistance to thermal shock, oxidation, and corrosion, which are critical factors in the harsh environments of semiconductor processing. The use of SiC material significantly enhances the plate's lifespan, reducing the frequency of replacements and thus lowering maintenance costs and downtime in production facilities.

The SiC ICP plate plays a crucial role in the plasma etching and deposition processes, which are fundamental to the creation of semiconductor wafers. During these processes, the SiC ICP plate's high thermal conductivity and stability ensure precise temperature control and uniform distribution of plasma, which is vital for achieving consistent and accurate etching and deposition results. This precision is critical in the production of increasingly miniaturized and complex semiconductor devices, where even minor deviations can lead to significant performance issues.

One of the standout features of the SiC ICP plate is its exceptional mechanical strength. Silicon carbide's inherent hardness and rigidity provide excellent structural integrity, even under extreme conditions. This robustness translates to a more stable and reliable performance during high-intensity plasma processes, minimizing the risk of component failure and ensuring continuous, uninterrupted operation. Moreover, the material's lightweight nature compared to traditional metal counterparts contributes to easier handling and installation, further enhancing operational efficiency.

In addition to its physical attributes, the SiC ICP plate offers excellent chemical stability. It exhibits remarkable resistance to reactive plasma species, which are prevalent in semiconductor etching and deposition environments. This resistance ensures that the plate maintains its integrity and performance over extended periods, even in the presence of aggressive chemicals used in plasma processes. Consequently, the SiC ICP plate provides a cleaner processing environment, reducing the likelihood of contamination and defects in semiconductor wafers.