Silicon Carbide Chamber Lid

Silicon Carbide Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.

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Product Description

Silicon Carbide Chamber Lid used in single crystal growth or MOCVD, or wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex supplies high-purity silicon carbide (SiC) coated graphite construction provides superior heat resistance, even thermal uniformity for consistent epi layer thickness and resistance, and durable chemical resistance. They are durable to experience a combination of volatile precursor gases, plasma, and high temperature.
Our Silicon Carbide Chamber Lid is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Silicon Carbide Chamber Lid.

Parameters of Silicon Carbide Chamber Lid

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300