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China Deposition Semiconductor Manufacturers, Suppliers, Factory

Semicorex has been producing Deposition Semiconductor for many years and is one of the professional Deposition Semiconductor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    ICP Plasma Etching Plate

    Semicorex's ICP Plasma Etching Plate provides superior heat and corrosion resistance for wafer handling and thin film deposition processes. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Si Epitaxy

    Si Epitaxy

    Si epitaxy is a crucial technique in the semiconductor industry, as it enables the production of high-quality silicon films with tailored properties for various electronic and optoelectronic devices. . Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Guide Ring

    TaC Coated Guide Ring

    Semicorex TaC Coated Guide Ring, a pinnacle of innovation in SiC (Silicon Carbide) single crystal growth furnaces. Meticulously designed to meet the exacting demands of the semiconductor industry, this guide ring promises to redefine your crystal growth processes with unparalleled precision and reliability.
  • N-type Silicon Carbide Powder

    N-type Silicon Carbide Powder

    Semicorex N-type Silicon Carbide powder (SiC) is a high-purity, doped SiC material specifically designed for advanced crystal growth applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • SiC Axle Sleeve

    SiC Axle Sleeve

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our SiC Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

  • Korean memory chips plummeted

  • How is Silicon Carbide Manufactured?

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

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