MOCVD Vacuum Chamber Lid

MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex Graphite components are high purity SiC coated graphite, using in the process to grow the single crystal and wafer process. The MOCVD Vacuum Chamber Lid Compound growth has high heat and corrosion resistance, are durable to experience a combination of volatile precursor gases, plasma, and high temperature.

At Semicorex, we are committed to providing high-quality products and services to our customers. We use only the best materials, and our products are designed to meet the highest standards of quality and performance. Our MOCVD Vacuum Chamber Lid is no exception. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.

Parameters of MOCVD Vacuum Chamber Lid

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300