China MOCVD Cover Plate Manufacturers, Suppliers, Factory

Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

Semiconductors are materials whose electrical conductivity at room temperature lies between that of insulators and conductors. By introducing impurities, a process known as doping, these materials can become conductors.

Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.