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    • China Ceramic Sintering Furnace Manufacturers, Suppliers, Factory

    Semicorex has been producing Ceramic Sintering Furnace for many years and is one of the professional Ceramic Sintering Furnace manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC Wafer Transfer Hand

      SiC Wafer Transfer Hand

      Semicorex SiC Wafer Transfer Hand stands as a cornerstone of automation within the semiconductor manufacturing process, serving as a sophisticated robotic tool for the precise and efficient handling of semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • TaC Coating Wafer Susceptor

      TaC Coating Wafer Susceptor

      Semicorex TaC Coating Wafer Susceptor is a graphite tray coated with tantalum carbide, used in silicon carbide epitaxial growth to enhance wafer quality and performance. Choose Semicorex for its advanced coating technology and durable solutions that ensure superior SiC epitaxy results and extended susceptor lifespan.*
    • Tantalum Carbide Halfmoon Part

      Tantalum Carbide Halfmoon Part

      Semicorex Tantalum Carbide Halfmoon Part is a crucial component utilized in the semiconductor epitaxy process, a critical stage in the manufacturing of semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • SiC Epitaxy Susceptor

      SiC Epitaxy Susceptor

      Crafted with precision and engineered for reliability, SiC Epitaxy Susceptor features high corrosion resistance, high thermal conductivity, resistance to thermal shock, and high chemical stability, enabling it to function effectively within an epitaxial atmosphere.Therefore, SiC Epitaxy Susceptor is considered a core and crucial component in MOCVD equipment. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Coated Graphite Susceptor for MOCVD

      SiC Coated Graphite Susceptor for MOCVD

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Tantalum Carbide Coating Halfmoon Part

      Tantalum Carbide Coating Halfmoon Part

      Semicorex Tantalum Carbide Coating Halfmoon Part is a highly specialized component designed for use in the epitaxial deposition process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

      As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

    • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

      GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

    • What is cantilever paddles?

      The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

    • Heteroepitaxy of 3C-SiC: An Overview

      The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

    • Methods of AlN Crystal Growth

      AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

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