LPE SiC-Epi Halfmoon

By protecting equipment components, preventing contamination, and ensuring consistent process conditions, Semicorex LPE SiC-Epi Halfmoon empowers the semiconductor industry to produce ever-more sophisticated and high-performance devices that power our technological world.

Many materials succumb to performance degradation at elevated temperatures, but not CVD TaC. The LPE SiC-Epi Halfmoon, with its exceptional thermal stability and resistance to oxidation, remain structurally sound and chemically inert even at the high temperatures encountered within epitaxy reactors. This ensures consistent heating profiles, prevents contamination from degraded components, and enables reliable crystal growth. This resilience stems from TaC’ s high melting point (exceeding 3800°C) and its resistance to oxidation and thermal shock.

Many epitaxial processes rely on reactive gases like silane, ammonia, and metalorganics to deliver the constituent atoms to the growing crystal. These gases can be highly corrosive, attacking reactor components and potentially contaminating the delicate epitaxial layer. The LPE SiC-Epi Halfmoon stands defiant against the barrage of chemical threats. Its inherent inertness to reactive gases l stems from the strong chemical bonds within the TaC lattice, preventing these gases from reacting with or diffusing through the coating. This exceptional chemical resistance makes the LPE SiC-Epi Halfmoon a significant part for protecting components in harsh chemical processing environments.

Friction is the enemy of efficiency and longevity. CVD TaC coating of the LPE SiC-Epi Halfmoon act as an indomitable shield against wear, significantly reducing friction coefficients and minimizing material loss during operation. This exceptional wear resistance is particularly valuable in high-stress applications  where even microscopic wear can lead to significant performance degradation and premature failure. The LPE SiC-Epi Halfmoon excels in this arena, offering exceptional conformal coverage that ensures even the most complex geometries receive a complete and protective layer, enhancing performance and longevity.

Gone are the days when CVD TaC coatings were limited to small, specialized components. Advancements in deposition technology have enabled the creation of coatings on substrates up to 750 mm in diameter, paving the way for larger, more robust components capable of handling even more demanding applications.

8-inch Halfmoon Part for LPE Reactor

Advantages of CVD TaC Coatings in Epitaxy:

Enhanced Device Performance: By maintaining process purity and uniformity, CVD TaC coatings contribute to the growth of higher-quality epitaxial layers with improved electrical and optical properties, leading to enhanced performance in semiconductor devices.

Increased Throughput and Yield: The extended lifespan of CVD TaC-coated components reduces downtime associated with maintenance and replacement, leading to higher reactor uptime and increased production throughput. Additionally, the reduced contamination risk translates to higher yields of usable devices.

Cost-Effectiveness: While CVD TaC coatings may have a higher upfront cost, their extended lifespan, reduced maintenance requirements, and improved device yields contribute to significant cost savings over the lifetime of the epitaxy equipment.