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    Japan recently restricted exports of 23 types of semiconductor manufacturing equipment. The announcement has sent ripples across the industry, as the move is expected to have a significant impact on global supply chains for semiconductor manufacturing.

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

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    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

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    According to reports from German media, U.S. chip manufacturer Wolfspeed is pausing its plans to build a semiconductor plant in Germany.

  • What is a Dummy Wafer?

    In the semiconductor manufacturing process, wafers form the foundation of chip production. Among these, a special type of wafer, referred to as the Dummy Wafer, plays a pivotal role in ensuring equipment stability and controlling production costs.

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