Ultra-Thin Graphite with High Porosity

Superior Surface Particle Adhesion and Excellent Anti-Dusting Characteristics: Semicorex Ultra-Thin Graphite with High Porosity exhibits exceptional surface particle adhesion, ensuring minimal dust generation and maintaining a clean working environment, which is crucial for sensitive applications such as semiconductor manufacturing.

High-Temperature Tolerance: the Ultra-Thin Graphite with High Porosity can withstand extreme temperatures up to 2500°C, making it suitable for high-temperature processes and environments where conventional materials would fail.

High Porosity up to 65%: The high porosity of porous graphite allows for efficient gas and fluid flow, enabling better mass transfer and heat dissipation in various applications.

Ultra-Thin Porous Graphite with Excellent Machinability: the Ultra-Thin Graphite with High Porosity can be fabricated into ultra-thin sheets as thin as 1.5mm while maintaining high porosity, providing flexibility in design and application.

Machinability for Ultra-Thin Walled Cylindrical Shapes: the Ultra-Thin Graphite with High Porosity can be machined into ultra-thin walled cylindrical shapes with wall thicknesses of ≤1mm, offering versatility in component design and functionality.

Excellent Insulating Properties and Batch Consistency: the Ultra-Thin Graphite with High Porosity demonstrates outstanding insulating characteristics and consistent batch-to-batch performance, ensuring reliable and reproducible results in critical applications.

Ultra-Pure Porous Graphite Material: the Ultra-Thin Graphite with High Porosity is available in ultra-pure forms, achieving high levels of purity that are essential for demanding applications such as semiconductor manufacturing.

High Strength: Despite its porous nature, the Ultra-Thin Graphite with High Porosity exhibits impressive strength, making it suitable for structural components and load-bearing applications.

Applications in Semiconductor Manufacturing:

Ultra-Thin Graphite with High Porosity is primarily utilized in the semiconductor industry, particularly in the novel mass transfer process. This process employs a new thermal field for single-pass mass transfer, significantly enhancing transfer efficiency and maintaining a constant rate, thereby reducing the impact of recrystallization (avoiding double-pass mass transfer) and effectively minimizing micro-piping or other related crystal defects. Additionally, porous graphite helps balance gas phase components, isolate trace impurities, adjust local temperatures, and reduce physical particle encapsulation. By satisfying the requirements for crystal usability, porous graphite enables a substantial increase in crystal thickness, making it a key technology for addressing the challenge of growing thicker crystals.