Porous Graphite Crucible

A porous graphite crucible plays a critical role in the process of silicon carbide (SiC) single crystal growth, a crucial step in semiconductor manufacturing. This specialized crucible is designed to withstand extreme temperatures and harsh chemical environments, making it an ideal container for the high-temperature reactions involved in SiC crystal growth.

The crucible is typically made from high-purity graphite material, known for its excellent thermal conductivity, chemical inertness, and mechanical strength. The term "porous" refers to the intentional creation of a permeable structure within the graphite, allowing for the controlled flow of gases and liquids during the crystal growth process.

The SiC single crystal growth process involves the sublimation of silicon and carbon source materials in a high-temperature furnace. The porous graphite crucible acts as a container for these source materials, providing a stable and controlled environment for the crystal growth to occur. Its porous structure allows for the efficient transport of precursor gases and facilitates the removal of by-products generated during the growth process.

The crucible's ability to maintain stability and withstand extreme conditions is essential for achieving high-quality SiC single crystals, which are integral to the production of semiconductor devices. The porosity of the crucible helps in optimizing gas flow and heat distribution, contributing to the uniform growth of large and high-quality SiC crystals.