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    • China Silicon Carbide Graphite Trays Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Graphite Trays for many years and is one of the professional Silicon Carbide Graphite Trays manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • CVD-SiC Showerhead

      CVD-SiC Showerhead

      Semicorex CVD-SiC showerhead provides durability, excellent thermal management, and resistance to chemical degradation, making it a suitable choice for demanding CVD processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Ceramic Plate

      SiC Ceramic Plate

      Semicorex SiC Ceramic Plate offers unmatched performance in environments requiring wear resistance, corrosion resistance, and high-temperature stability. This product is designed for use as lining plates and support parts across a variety of demanding applications.
    • Monocrystalline Silicon Epitaxial Susceptor

      Monocrystalline Silicon Epitaxial Susceptor

      Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • MOCVD 3x2’’ Susceptor

      MOCVD 3x2’’ Susceptor

      Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
    • SOI Wafers

      SOI Wafers

      Semicorex SOI Wafers represent a critical advancement in this field, offering numerous advantages over traditional silicon wafers. At Semicorex, we are proud to manufacture and supply SOI wafers that meet the rigorous demands of modern semiconductor applications.*
    • SiC Coating Ring

      SiC Coating Ring

      Semicorex SiC Coating Ring is a critical component in the demanding environment of semiconductor epitaxy processes. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
    • Related Blog
    • Reviews

    • Method of GaN Crystal Growth

      When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

    • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

      Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

    • What is SiC epitaxy?

      Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

    • Introduction to Silicon Carbide Power Devices

      Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

    • Silicon Carbide Substrate

      The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

    • Introducing Gallium Oxide(Ga2O3)

      Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

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