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  • Sio2 Dry Etching

    • China Sio2 Dry Etching Manufacturers, Suppliers, Factory

    Semicorex has been producing Sio2 Dry Etching for many years and is one of the professional Sio2 Dry Etching manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • TaC Coated Planetary Susceptor

      TaC Coated Planetary Susceptor

      Semicorex TaC Coated Planetary Susceptor is a highly specialized component designed for use in the epitaxial processes of semiconductor manufacturing. Semicorex is dedicated to delivering top-quality products at competitive prices. We are eager to establish a long-term partnership with you in China.*
    • TaC Coating Epitaxial Plate

      TaC Coating Epitaxial Plate

      You can rest assured to buy TaC Coating Epitaxial Plate from our factory. Semicorex TaC (Tantalum Carbide) coating epitaxial plate boasts exceptional heat resistance, making it ideal for applications subjected to high temperatures. Its remarkable ability to withstand heat ensures durability and reliability in demanding environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • High Purity Quartz Crucible

      High Purity Quartz Crucible

      Semicorex High Purity Quartz Crucible meticulously crafted from high-purity quartz, is essential for extracting single-crystal silicon—an indispensable component in modern electronics and renewable energy technologies.**
    • 3C-SiC Wafer Substrate

      3C-SiC Wafer Substrate

      Semicorex 3C-SiC wafer substrate is made of SiC with cubic crystal. We have been manufacturer and supplier of semiconductor wafers for many years. We look forward to becoming your long-term partner in China.
    • MOCVD Waferholder

      MOCVD Waferholder

      Semicorex MOCVD Waferholder is an indispensable component for SiC epitaxy growth, offering superior thermal management, chemical resistance, and dimensional stability. By choosing Semicorex's waferholder, you enhance the performance of your MOCVD processes, leading to higher quality products and greater efficiency in your semiconductor manufacturing operations. *
    • SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

      SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

      Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a highly reliable solution for semiconductor manufacturing processes, featuring superior heat distribution and thermal conductivity properties. It is also highly resistant to corrosion, oxidation, and high temperatures.
    • Related Blog
    • Reviews

    • High-Purity CVD Thick SiC: Process Insights for Material Growth

      Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

    • Silicon Carbide Industry

      The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

    • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

      Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

    • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

      Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

    • The significance of porous graphite materials to SiC crystal growth

      Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

    • The structure of Electrostatic Chuck(ESC)

      An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

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