MOCVD Epitaxy Susceptor

Advantages for Demanding Epitaxy Applications:

Ultra-High Purity: The MOCVD Epitaxy Susceptor is crafted to achieve ultra-high purity levels, minimizing the risk of unwanted impurities being incorporated into the growing epitaxial layers. This exceptional purity is crucial for maintaining high carrier mobility, achieving optimal doping profiles, and ultimately, realizing high-performance semiconductor devices.

Exceptional Thermal Shock Resistance: The MOCVD Epitaxy Susceptor presents remarkable resistance to thermal shock, withstanding rapid temperature changes and gradients inherent to the MOCVD process. This stability ensures consistent and reliable performance during critical heating and cooling phases, minimizing the risk of wafer bowing, stress-induced defects, and process interruptions.

Superior Chemical Resistance: The MOCVD Epitaxy Susceptor demonstrates exceptional resistance to a wide range of reactive gases and chemicals used in MOCVD, including corrosive byproducts that can form at elevated temperatures. This inertness prevents contamination of the epitaxial layers and ensures the purity of the deposited semiconductor material, critical for achieving the desired electrical and optical properties.

Availability in Complex Shapes: The MOCVD Epitaxy Susceptor can be precisely machined into complex shapes and geometries to optimize gas flow dynamics and temperature uniformity within the MOCVD reactor. This customized design capability enables uniform heating of the substrate wafers, minimizing temperature variations that can lead to inconsistent epitaxial growth and device performance.