AIN Substrate

Unmatched Thermal Conductivity and Electrical Isolation

Semicorex’s AIN Substrate stands out primarily due to its exceptional thermal conductivity, which is crucial for managing heat in high-power electronic devices. With standard thermal conductivity at 175 W/m·K, and options for high (200 W/m·K) and ultra-high thermal conductivity (230 W/m·K), the AIN Substrate effectively dissipates heat, ensuring the longevity and reliability of components. Coupled with its strong electrical isolation properties, the AIN Substrate is the preferred material for sub-mounts, printed circuit boards (PCBs), and packages for high-power, high-reliability components, as well as heat spreaders and various electronic circuits.

Compatibility with Silicon and Thermal Expansion

One of the standout features of the AIN Substrate is its coefficient of thermal expansion (CTE), which ranges from 4 to 6 x 10^-6/K between 20 and 1000°C. This CTE is closely matched to that of silicon, making the AIN Substrate an ideal material for the semiconductor industry and electronic device packaging. This compatibility reduces the risk of thermal stress and ensures seamless integration with silicon-based components, enhancing overall device performance and reliability.

Customization to Meet Diverse Needs

Semicorex offers extensive customization services for the AIN Substrate, allowing for tailored solutions to meet specific application requirements. Whether the need is for grinding type, instant firing type, high bending resistance, high thermal conductivity, polishing type, or laser scribing type, Semicorex can provide substrates that are optimized for the desired performance characteristics. This level of customization ensures that clients receive substrates that precisely meet their thermal, mechanical, and electrical needs.

Versatility in Metallization and Electronic Applications

The AIN Substrate by Semicorex is compatible with various metallization techniques, including Direct Plated Copper (DPC), Direct Bonded Copper (DBC), Thick Film Printing, Thin Film Printing, and Active Metal Brazing (AMB). This versatility makes it suitable for a wide range of electronics applications, from high-power LEDs and integrated circuits (ICs) to insulated-gate bipolar transistors (IGBTs) and battery applications. The substrate’s adaptability to different metallization methods ensures that it can be effectively used in diverse electronic systems.

Ultra-Thin Design Capabilities

For applications where space and weight are critical considerations, Semicorex offers AIN Substrates with thicknesses as thin as 0.1 mm. This ultra-thin design capability allows for the development of compact and lightweight electronic devices without compromising on performance or reliability. The ability to produce such thin substrates further extends the range of applications and enhances the design flexibility for engineers and designers.

Safe and Environmentally Friendly Alternative to BeO

In the semiconductor industry, Aluminum Nitride is increasingly being adopted as a replacement for Beryllium Oxide (BeO) due to its non-hazardous nature under machining. Unlike BeO, which poses significant health risks during processing, AlN is safe to handle and process, making it a more environmentally friendly and safer alternative. This shift not only improves worker safety but also aligns with stricter environmental regulations and sustainability goals.

High Mechanical Strength

The mechanical strength of the AIN Substrate is another critical advantage. With a biaxial strength exceeding 320 MPa, the substrate ensures durability and resilience under mechanical stress. This high mechanical strength is vital for applications that require robust and reliable materials, particularly in high-power electronics and harsh operational environments. The durability of the AIN Substrate contributes to the longevity and reliability of the devices in which it is used.

Broad Spectrum of Applications

The unique properties of the AIN Substrate make it suitable for a broad spectrum of high-power and high-performance applications:

High-Power LEDs: The exceptional thermal management capabilities of the AIN Substrate ensure the efficient operation and extended lifespan of high-power LEDs.

Integrated Circuits (ICs): The electrical isolation and thermal conductivity of the AIN Substrate make it an ideal choice for ICs, enhancing performance and reliability.

Insulated-Gate Bipolar Transistors (IGBTs): The substrate’s ability to manage high power and thermal loads is crucial for the operation of IGBTs in various power electronics applications.

Battery Applications: In battery technologies, the AIN Substrate provides effective thermal management, improving safety and performance.

Piezoelectric Applications: The substrate’s mechanical strength and thermal properties support high-precision piezoelectric devices.

High-Power Motors: The thermal conductivity and durability of the AIN Substrate enhance the efficiency and lifespan of high-power motors.

Quantum Computing: The precise thermal management and electrical isolation properties of the AIN Substrate make it suitable for advanced quantum computing applications.