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    • China Aln Ceramic Substrate Manufacturers, Suppliers, Factory

    Semicorex has been producing Aln Ceramic Substrate for many years and is one of the professional Aln Ceramic Substrate manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.
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      RTP RTA SiC Coated Carrier

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Porous Carbon

      Porous Carbon

      Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Plasma Processing Focus Ring

      Plasma Processing Focus Ring

      Semicorex Plasma processing focus ring is specially designed to meet the high demands of plasma etch processing in the semiconductor industry. Our advanced, high-purity Silicon Carbide Coated Components are built to withstand extreme environments and are suitable for use in various applications, including silicon carbide layers and epitaxy semiconductors.
    • Wafer Holder for ICP Etching Process

      Wafer Holder for ICP Etching Process

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    • Planetary Disk

      Planetary Disk

      Semicorex Planetary Disk, silicon carbide coated graphite wafer susceptor or carrier designed for Molecular Beam Epitaxy (MBE) processes within Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • Can you grind silicon carbide?

      Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

    • Heteroepitaxy of 3C-SiC: An Overview

      The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

    • Ion Implant and Diffusion Process

      Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

    • Method of GaN Crystal Growth

      When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

    • What is CVD process in semiconductor?

      Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

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