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    • China aln thermal conductivity Manufacturers, Suppliers, Factory

    Semicorex has been producing aln thermal conductivity for many years and is one of the professional aln thermal conductivity manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Boat Holder

      SiC Boat Holder

      The SiC Boat Holder by Semicorex is innovatively forged from SiC, explicitly tailored for pivotal roles within the photovoltaic, electronic, and semiconductor sectors. Engineered with precision, the Semicorex SiC Boat Holder offers a protective, stable milieu for wafers through every stage—be it processing, transit, or storage. Its meticulous design ensures precision in dimensions and evenness, crucial for minimizing wafer deformation and maximizing operational yield.
    • High-Purity Flexible Graphite Foil

      High-Purity Flexible Graphite Foil

      Semicorex high-purity flexible graphite foil is a versatile and high-performance material that can withstand extreme temperatures and challenging processes. Its ultra-high purity grades and unique properties make it an ideal solution for a wide range of high-temperature applications. We provide custom high-purity flexible graphite foil which has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Tantalum Carbide Coated Graphite Parts

      Tantalum Carbide Coated Graphite Parts

      Semicorex provide high-quality Tantalum Carbide Coated Graphite Parts with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • LPE SiC-Epi Halfmoon

      LPE SiC-Epi Halfmoon

      Semicorex LPE SiC-Epi Halfmoon is an indispensable asset in the world of epitaxy, providing a robust solution to the challenges posed by high temperatures, reactive gases, and stringent purity requirements.**
    • Quartz Diffusion Tube

      Quartz Diffusion Tube

      Semicorex Quartz Diffusion Tube is indispensable in the semiconductor wafer manufacturing industry, particularly during the critical processes of thermal oxidation and annealing.**
    • Related Blog
    • Reviews

    • What is isostatic graphite?

      Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

    • Purification Technology of Graphite in SiC semiconductor

      Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

    • Final polishing of the silicon wafer surface

      To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

    • What is the process of SiC epitaxial?

      In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

    • Thin film growth process

      Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

    • Substrate Cutting and Grinding Process

      SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

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