With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
The Semicorex SiC-Coated Barrel Susceptor is a top-quality graphite product coated with high-purity SiC, designed specifically for LPE processes and other semiconductor manufacturing applications. Its exceptional density and thermal conductivity provide superior heat distribution and protection in high-temperature and corrosive environments.
At Semicorex, we focus on providing high-quality, cost-effective SiC-Coated Barrel Susceptor, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.
Parameters of SiC-Coated Barrel Susceptor
Main Specifications of CVD-SIC Coating |
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SiC-CVD Properties |
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Crystal Structure |
FCC β phase |
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Density |
g/cm ³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Grain Size |
μm |
2~10 |
Chemical Purity |
% |
99.99995 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
Thermal conductivity |
(W/mK) |
300 |
Features of SiC-Coated Barrel Susceptor
- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.