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    • China Wafer Electronics Manufacturers, Suppliers, Factory

    Semicorex has been producing Wafer Electronics for many years and is one of the professional Wafer Electronics manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    Hot Products

    • Carbide-Coated Reactor Barrel Susceptor

      Carbide-Coated Reactor Barrel Susceptor

      The Semicorex Carbide-Coated Reactor Barrel Susceptor is a premium quality graphite product coated with high-purity SiC, designed specifically for LPE processes. With excellent heat and corrosion resistance, this product is perfect for use in semiconductor manufacturing applications.
    • Lithography Machine Skeleton

      Lithography Machine Skeleton

      Semicorex lithography machine skeleton is an essential structural component designed to support and stabilize the intricate machinery involved in photolithography processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Seal Parts

      SiC Seal Parts

      Semicorex SiC seal parts, or Silicon Carbide seal parts, represent a cutting-edge and highly efficient solution for various industrial applications where sealing integrity is paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Wafer Boat for Semiconductor Process

      Wafer Boat for Semiconductor Process

      Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Wafer Boat for Semiconductor Process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Graphite Thermal Field

      Graphite Thermal Field

      Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
    • SiC Boat for Wafer Handling

      SiC Boat for Wafer Handling

      Crafted from a silicon carbide of exceptional purity, the Semicorex SiC Boat for Wafer Handling boasts a construction that includes precision slots to secure the wafers, mitigating any movement during operational procedures. The choice of silicon carbide as the material ensures not only hardness and resilience but also the capability to endure elevated temperatures and exposure to chemicals. This makes the SiC Boat for Wafer Handling a pivotal component in a multitude of semiconductor production stages, such as the cultivation of crystals, diffusion, ion implantation, and etching processes.
    • Related Blog
    • Reviews

    • Purification Technology of Graphite in SiC semiconductor

      Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • What is Crystal Growth Furnace System

      The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

    • The Study on Reaction-Sintered SiC Ceramics and Their Properties

      Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

    • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

      The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

    • Silicon Carbide Wafer Epitaxy Technology

      Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

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