GaN vs SiC

There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

Although SiC is a suitable material for power amplifiers, it is not appropriate for high-frequency applications. On the other hand, GaN is the preferred material for building small power amplifiers. However, engineers faced a challenge when combining GaN with P-type silicon MOS transistors, as it limited the frequency and efficiency of GaN. While this combination did offer complementary capabilities, it was not an ideal solution to the problem.

As technology advances, researchers may eventually find P-type GaN devices or complementary devices using different technologies that can be combined with GaN. Until that day, however, GaN will continue to be limited by the technology of our time.

The advancement of GaN technology requires a collaborative effort between materials science, electrical engineering, and physics. This interdisciplinary approach is necessary to overcome the current limitations of GaN technology. If we can make breakthroughs in developing P-type GaN or find suitable complementary materials, it will not only enhance the performance of GaN-based devices but also contribute to the broader field of semiconductor technology. This could pave the way for more efficient, compact, and reliable electronic systems in the future.