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    Semicorex Half Parts for SiC Epitaxial Equipment, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of SiC wafer epitaxy. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD TaC Coated Rings

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    Semicorex CVD TaC Coated Rings are high-performance flow guide components used in crystal growth furnaces to ensure precise gas control and thermal stability. Semicorex offers unmatched quality, engineering expertise, and proven performance in the most demanding semiconductor environments.*
  • Porous Ceramic Chuck

    Porous Ceramic Chuck

    Semicorex Porous Ceramic Chuck (Vacuum Chuck) is a high-precision tool designed to securely hold wafers during semiconductor manufacturing processes. By choosing Semicorex, you benefit from a solution that offers exceptional performance, durability, and customization options, ensuring enhanced production efficiency and consistent quality standards.*
  • SiC Coating Flat Susceptor

    SiC Coating Flat Susceptor

    Semicorex SiC Coating Flat Susceptor is a high-performance substrate holder designed for precise epitaxial growth in semiconductor manufacturing. Choose Semicorex for reliable, durable, and high-quality susceptors that enhance the efficiency and precision of your CVD processes.*
  • Quartz Crucible

    Quartz Crucible

    Semicorex quartz crucible is designed for use in the single-crystal growth of semiconductor materials, ensuring optimal performance and crystal quality. Choose Semicorex for our superior craftsmanship, precision engineering, and commitment to delivering products that meet the highest industry standards.*
  • Quartz Ring

    Quartz Ring

    Semicorex Quartz Ring stands as an indispensable component within the intricate realm of semiconductor manufacturing. Crafted with precision and engineered to exacting standards, this ring embodies durability, purity, and functionality, pivotal for the success of semiconductor fabrication processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

  • Advantages of SiC in EV industry

    As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • What is Dummy Wafer

    A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.

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