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  • Satellite Platforms for MOCVD

    • China Satellite Platforms for MOCVD Manufacturers, Suppliers, Factory

    Semicorex has been producing Satellite Platforms for MOCVD for many years and is one of the professional Satellite Platforms for MOCVD manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC Coated Support Ring

      SiC Coated Support Ring

      Semicorex SiC Coated Support Ring is an essential component used in the semiconductor epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • MOCVD Heater

      MOCVD Heater

      The MOCVD Heater by Semicorex is a highly advanced and meticulously engineered component that offers a multitude of advantages, including exceptional chemical purity, thermal efficiency, electrical conductivity, high emissivity, corrosion resistance, inoxidizability, and mechanical strength.**
    • ICP Plasma Etching System

      ICP Plasma Etching System

      Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
    • Soft Graphite Felt

      Soft Graphite Felt

      Semicorex Soft Graphite Felt is a high-performance thermal insulation material designed for extreme temperature applications, offering exceptional stability and reliability. Choosing Semicorex means opting for superior quality and innovation, backed by our commitment to delivering top-tier semiconductor components that meet the highest industry standards.*
    • SiC Powder

      SiC Powder

      Semicorex SiC Powder, also known as silicon carbide powder, is a finely ground material predominantly composed of N-type α-phase silicon carbide. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • TaC Coating Wafer Susceptor

      TaC Coating Wafer Susceptor

      Semicorex TaC Coating Wafer Susceptor is a graphite tray coated with tantalum carbide, used in silicon carbide epitaxial growth to enhance wafer quality and performance. Choose Semicorex for its advanced coating technology and durable solutions that ensure superior SiC epitaxy results and extended susceptor lifespan.*
    • Related Blog
    • Reviews

    • What are epitaxial wafers used for?

      Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

    • What is isostatic graphite?

      Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

    • The Fatal Flaw of GaN

      ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

    • Dry Etching vs Wet Etching

      In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

    • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

      In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

    • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

      Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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