850V High Power GaN-on-Si Epi Wafer

Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.

Send Inquiry

Product Description

Semicorex 850V High Power GaN-on-Si Epi Wafer has achieved high uniformity of the epitaxial wafer by improving the growth mechanism and precisely controlling the growth conditions, high breakdown voltage and low leakage current of the epitaxial wafer by utilizing the unique buffer layer growth technology, and excellent 2D electron gas concentration by precisely controlling the growth conditions. As a result, we have successfully overcome the challenges posed by GaN-on-Si heterogeneous epitaxial growth and successfully developed products suitable for high voltage.

Features of 850V High Power GaN-on-Si Epi Wafer”

● True high-voltage resistance.

● The world's top level of voltage withstand control level.

● Current density greater than 100mA/mm.